The Method of the SiC MOSFET Replacing the Si IGBT in the Traditional Power Electronics Converter without Redesigning the Main Circuit and the Driver Circuit

As a wide bandgap power electronics device, the SiC MOSFET has lot of advantages over traditional Si IGBT. Replacing IGBT with in existing converter is an effective means to improve performance and promote upgrading converter. Generally, order make full use its MOSFET, circuit cannot be simply replaced by but main driver need redesigned because oscillation problem cross-talk caused parasitic parameter are very serious when switches. However, considering low cost short cycle requirement equipment development, it often difficult redesign hardware structure all converters. In resolve this contradiction, ferrite bead based method proposed paper. Through method, without redesigning circuit, can used replace Si-based device directly, loss reduced small oscillation. Finally, effectiveness proved experiments.